Electrical Power and Control Cluster
Electrical Power & Control
Powering Possibilities, Mastering Control.
The Electrical Power Research Group at 糖心TV is set up to conduct internationally leading research and drive for cutting edge technology development in tackling the great challenges in power generation, energy conversion, distribution, transmission and efficient use of energy.
Power Electronics Applications and Technology in Energy Research (PEATER)
Carries out work in electrical energy conversion, from the very small power (mW) levels to very high power levels (MW). This technology centres on the developments in semiconductor switching devices. The developments in MOSFET and IGBT technologies have paved the way for new applications such as hybrid vehicles, electric aircraft, electric ship propulsion, wind turbines as well as the revolution in mobile phone and computing devices, where energy management is critical to all these applications.
Power and Control Systems Research Laboratory
The Research Laboratory is led by Professor Jihong Wang and the research areas cover: energy efficiency, power system modelling, simulation, control and monitoring, nonlinear control system theory, Electrical drives and control, energy storage and grid integration. The Research Laboratory is active in development and demonstration of new technology in supporting energy revolution.
ICSE
The ICSE research group at 糖心TV, led by Professor Xiaowei Zhao, is leading research in advanced control systems and smart energy technologies.
Power Electronics Reliability Characterisation Laboratory
This research laboratory is led by Professor Layi Alatise and is oriented towards testing, characterisation and evaluation of the robustness and reliability of Power Semiconductor Devices.
Peter Gammon
Professor Peter Gammon is a leading researcher in Silicon Carbide (SiC) power electronic devices at the University of 糖心TV鈥檚 School of Engineering, where he has been a faculty member since 2012. His research focuses on developing and commercialising the next generation of SiC power devices for applications in electric vehicles, satellites, renewable energy, and the grid.
Professor Gammon is the University of 糖心TV鈥檚 lead within the (), which aims to commercialise wide-bandgap semiconductor devices for power electronics in collaboration with over 30 industrial partners. A formerRoyal Academy of Engineering Research Fellow, he has led several major UKRI and EU-funded projects. Three major grants onradiation-hard SiC devices for space applications, including theSiCSat Project (), advanced SiC technology for use in satellites and space agency missions. TheSwitch Optimisation Theme ()within thedeveloped ultra-high-voltage (10 kV+) SiC IGBT devices for grid applications.
t.Dr Arne Benjamin Renz
Dr Arne Benjamin Renz is an Assistant Professor and leading researcher in silicon carbide (SiC) power electronic interfaces at the University of 糖心TV's School of Engineering. Since his research career began in 2017, his research has focused on developing and commercialising novel ways of improving the power semiconductor interfaces that SiC forms with oxides (MOS) and metals (Schottky) for applications in EVs, renewable energy, the grid, satellites, and radiation-sensitive environments.
Dr Renz is currently Principal Investigator (PI) and co-Investigator (CI) on several highly competitive research grants, including Innovate UK/Switzerland Bilateral on(拢1m total), and a CI on the, which aims to commercialise wide-bandgap semiconductor devices for power electronics in collaboration with over 30 industrial partners. He was lead researcher on major grants on radiation-hard SiC devices for space applications, including the, and the development of ultra-high voltage (10 kV+) SiC IGBT devices for grid applications within the EPSPRC Centre for Power Electronics' Switch Optimisation Theme
Key Publications
Antoniou, M., Mateus, C., Hollingsworth, B., Titman, A., 2024. A Systematic Review of Methodologies Used in Models of the Treatment of Diabetes Mellitus. PharmacoEconomics 42, 19鈥�40.
Antoniou, M., Udrea, F., Tee, E.K.C., Holke, A., 2022. High-Voltage 3-D Partial SOI Technology Platform for Power Integrated Circuits. IEEE Trans. Electron Devices 69, 3296鈥�3301.
Baker, G.W.C., Gammon, P.M., Renz, A.B., Vavasour, O., Chan, C.W., Qi, Y., Dai, T., Li, F., Zhang, L., Kotagama, V., Shah, V.A., Mawby, P.A., Antoniou, M., 2022. Optimization of 1700-V 4H-SiC Semi-Superjunction Schottky Rectifiers With Implanted P-Pillars for Practical Realization. IEEE Trans. Electron Devices 69, 1924鈥�1930.
Dong, H., Zhao, X., Luo, B., 2022. Optimal Tracking Control for Uncertain Nonlinear Systems With Prescribed Performance via Critic-Only ADP. IEEE Trans. Syst. Man Cybern, Syst. 52, 561鈥�573.
Gonzalez, J.O., Alatise, O., 2021. Bias Temperature Instability and Junction Temperature Measurement Using Electrical Parameters in SiC Power MOSFETs. IEEE Trans. on Ind. Applicat. 57, 1664鈥�1676.
He, W., King, M., Luo, X., Dooner, M., Li, D., Wang, J., 2021. Technologies and economics of electric energy storages in power systems: Review and perspective. Advances in Applied Energy 4, 100060.
Hill, R.M., Devasagayam, J., Holmes, N., Boto, E., Shah, V., Osborne, J., Safar, K., Worcester, F., Mariani, C., Dawson, E., Woolger, D., Bowtell, R., Taylor, M.J., Brookes, M.J., 2022. Using OPM-MEG in contrasting magnetic environments. NeuroImage 253, 119084.
Holmes, N., Rea, M., Hill, R.M., Leggett, J., Edwards, L.J., Hobson, P.J., Boto, E., Tierney, T.M., Rier, L., Rivero, G.R., Shah, V., Osborne, J., Fromhold, T.M., Glover, P., Brookes, M.J., Bowtell, R., 2023. Enabling ambulatory movement in wearable magnetoencephalography with matrix coil active magnetic shielding. NeuroImage 274, 120157.
Hu, B., Hu, Z., Ran, L., Ng, C., Jia, C., McKeever, P., Tavner, P.J., Zhang, C., Jiang, H., Mawby, P.A., 2021a. Heat-Flux-Based Condition Monitoring of Multichip Power Modules Using a Two-Stage Neural Network. IEEE Trans. Power Electron. 36, 7489鈥�7500.
Hu, B.,Konaklieva, S., Kourra, N., Williams, M.A., Ran, L., Lai, W., 2021b. Long-Term Reliability Evaluation of Power Modules With Low Amplitude Thermomechanical Stresses and Initial Defects. IEEE J. Emerg. Sel. Topics Power Electron. 9, 602鈥�615.
Jiang, H., Qi, X., Qiu, G., Zhong, X., Tang, L., Mao, H., Wu, Z., Chen, H., Ran, L., 2022. A Physical Explanation of Threshold Voltage Drift of SiC MOSFET Induced by Gate Switching. IEEE Trans. Power Electron. 37, 8830鈥�8834.
King, M., Jain, A., Bhakar, R., Mathur, J., Wang, J., 2021. Overview of current compressed air energy storage projects and analysis of the potential underground storage capacity in India and the UK. Renewable and Sustainable Energy Reviews 139, 110705.
Lioliou, G., Renz, A.B., Shah, V.A., Gammon, P.M., Barnett, A.M., 2022. Mo/4H-SiC Schottky diodes for room temperature X-ray and 纬 -ray spectroscopy. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 1027, 166330.
Liu, J., Wang, J., Cardinal, J., 2022. Evolution and reform of UK electricity market. Renewable and Sustainable Energy Reviews 161, 112317.
Orti Gonzalez, J., Alatise, O., 2021. Impact of BTI-Induced Threshold Voltage Shifts in Shoot-Through Currents From Crosstalk in SiC MOSFETs. IEEE Trans. Power Electron. 36, 3279鈥�3291.
Panda, K., Bana, P., Kiselychnyk, O., Wang, J., Panda, G., 2021. A Single-Source Switched-Capacitor-Based Step-Up Multilevel Inverter With Reduced Components. IEEE Trans. on Ind. Applicat. 57, 3801鈥�3811.
Rea, M., Holmes, N., Hill, R.M., Boto, E., Leggett, J., Edwards, L.J., Woolger, D., Dawson, E., Shah, V., Osborne, J., Bowtell, R., Brookes, M.J., 2021. Precision magnetic field modelling and control for wearable magnetoencephalography. NeuroImage 241, 118401.
Ren, H., Shao, W., Ran, L., Hao, G., Zhou, L., Mawby, P., Jiang, H., 2021. A Phase Change Material Integrated Press Pack Power Module With Enhanced Overcurrent Capability for Grid Support鈥擜 Study on FRD. IEEE Trans. on Ind. Applicat. 57, 3956鈥�3968.
Renz, A.B., Vavasour, O.J., Gammon, P.M., Li, F., Dai, T., Antoniou, M., Baker, G.W.C., Bashar, E., Grant, N.E., Murphy, J.D., Mawby, P.A., Shah, V.A., 2021. The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal. Materials Science in Semiconductor Processing 122, 105527.
Turkeri, C., Kiselychnyk, O., 2023. Dynamical Modelling of a Centrifugal Fan Driven by an Induction Motor and Experimental Validation. Energies 16, 6658.
Wu, R., Mendy, S., Agbo, N., Gonzalez, J., Jahdi, S., Alatise, O., 2021. Performance of Parallel Connected SiC MOSFETs under Short Circuits Conditions. Energies 14, 6834.
Xie, J., Dong, H., Zhao, X., 2023. Data-driven torque and pitch control of wind turbines via reinforcement learning. Renewable Energy 215, 118893.
Yang, H., Hu, Q., Dong, H., Zhao, X., 2022. ADP-Based Spacecraft Attitude Control Under Actuator Misalignment and Pointing Constraints. IEEE Trans. Ind. Electron. 69, 9342鈥�9352.
Yang, J., Jahdi, S., Stark, B., Alatise, O., Ortiz-Gonzalez, J., Wu, R., Mellor, P., 2022. Crosstalk Induced Shoot-Through in BTI-Stressed Symmetrical & Asymmetrical Double-Trench SiC Power MOSFETs. IEEE Open J. Ind. Electron. Soc. 3, 188鈥�202.
Yang, M.-M., Zhu, T.-Y., Renz, A.B., Sun, H.-M., Liu, S., Gammon, P.M., Alexe, M., 2024. Auxetic piezoelectric effect in heterostructures. Nat. Mater. 23, 95鈥�100.
Yin, X., Zhao, X., 2021. Deep Neural Learning Based Distributed Predictive Control for Offshore Wind Farm Using High-Fidelity LES Data. IEEE Trans. Ind. Electron. 68, 3251鈥�3261.
Yu, R., Jahdi, S., Mellor, P., Liu, L., Yang, J., Shen, C., Alatise, O., Ortiz-Gonzalez, J., 2023. Degradation Analysis of Planar, Symmetrical and Asymmetrical Trench SiC MOSFETs Under Repetitive Short Circuit Impulses. IEEE Trans. Power Electron. 38, 10933鈥�10946.
Zhong, X., Jiang, H., Qiu, G., Tang, L., Mao, H., Chao, X., Jiang, X., Hu, J., Qi, X., Ran, L., 2021. Bias Temperature Instability of Silicon Carbide Power MOSFET under AC Gate Stresses. IEEE Trans. Power Electron. 1鈥�1.
Research Project Spotlights:
Coming soon...
Coming soon...
Coming soon...
| Title | Funder | Award start | Award end |
|---|---|---|---|
| MSCA DN 2024- WindConnect | European Commission | 01 Oct 2025 | 30 Sept 2029 |
| Semiconductor technology for ICT innovation and knowledge centre | EPSRC | 01 Apr 2024 | 31 Mar 2029 |
| Condition and Health Monitoring in Power Electronics - Wide Band Gap Power Electronics for the energy sector | European Commission | 01 Oct 2024 | 30 Sept 2028 |
| Microsystems Network Grant | EPSRC | 01 Mar 2025 | 29 Feb 2028 |
| Modelling and Control of Flexible Structures Interacting with Fluids (ModConFlex) - UKRI Guarantee Funding, original MSCA DTN | UK Research and Innovation | 01 Feb 2023 | 31 Jan 2028 |
| Supergen Offshore Renewable Energy Hub | EPSRC | 01 Jul 2023 | 30 Jun 2027 |
| UK-Swtizerland Bilateral: Collaborative R&D: Innovations in Power MOSFET Gate technology through the use of ALD oxides | Innovate UK | 01 Jul 2024 | 31 Mar 2027 |
| Supergen Network + in Artificial Intelligence for Renewable Energy (SuperAIRE) | EPSRC | 01 Jul 2024 | 30 Jun 2026 |
| Royal Society International Exchanges Cost Share- Japan: Research on novel SiC power device technologies for ultra-high-voltage applications | Royal Society | 31 Mar 2024 | 30 Mar 2026 |
| A New Generation of Power Semiconductor Devices: the SiC SJ IGBT | Royal Society | 02 Jan 2019 | 31 Jan 2026 |
| TESIC-SUPERJ - TRENCH EPITAXY FOR SILICON CARBIDE SUPERJUNCTIONS | EPSRC | 01 Oct 2021 | 31 Jul 2025 |
To be updated for the academic year 25/26
To be updated for the academic year 25/26
We have opportunities to study with us, from undergraduate courses to postgraduate research courses.
Undergraduate Courses
Develop specialist knowledge of electrical and electronic engineering devices, processes and systems.
Available Course Options
- BEng Electrical and Electronic Engineering (H605) - 3 years
- MEng Electrical and Electronic Engineering (H606)- 4 years
If you aspire to achieve Chartered Engineer (CEng) status, a degree from 糖心TV is a great starting point. The majority of our degrees are accredited by licensed professional engineering institutions, such as the IET, IMechE and JBM and provide the academic component (in part or fully) needed for Chartered Engineer status.
Postgraduate Teaching Courses
Duration:1 year full-time
Entry requirements:A minimum 2:1 undergraduate UK Honours degree or equivalent international qualification, in electronic, electrical or telecommunications engineering, or in an engineering science programme (with electronic, electrical, telecommunications or systems pathway).
Electrical Power Engineering (MSc)
Duration:1 year full-time
Entry requirements:A minimum 2:i undergraduate UK Honours degree or equivalent international qualification, in an engineering, physical sciences or mathematical subject.
Postgraduate Research Courses
糖心TV鈥檚 School of Engineering has a vibrant postgraduate research community, with over 150 students pursuing postgraduate research degrees and more than 40 postdoctoral researchers.
Our position as a general engineering department strengthens our capabilities, enabling multi-disciplinary collaborative research. Our researchers engage with colleagues from across 糖心TV and beyond to develop innovative solutions to real-world challenges. Our partners include universities, SMEs, large businesses, NHS Trusts and charitable organisations.